GRAPHOEPITAXY OF GE FILMS ON SIO2 BY ZONE-MELTING RECRYSTALLIZATION

被引：9

作者：

SAKANO, K ^{[1
]}

MORIWAKI, K ^{[1
]}

ARITOME, H ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 10期

关键词：

D O I：

10.1143/JJAP.21.L636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L636 / L638

页数：3

共 10 条

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[3] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

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SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

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APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[4] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].

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APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833

[5] EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM [J].

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CELLER, GK ;

FOTI, G ;

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APPLIED PHYSICS LETTERS, 1981, 38 (03) :137-139

[6] 2-D GRATING GRAPHOEPITAXY OF SILICON FILMS FROM SILICON-GOLD SUPERSATURATED SOLUTION [J].

MORI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) :L905-L908

[7] CRYSTALLIZATION OF VACUUM-EVAPORATED GERMANIUM FILMS BY ELECTRON-BEAM ZONE-MELTING PROCESS [J].

NAMBA, S .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1929-&

[8]

NAMBA S, 1964, OYO BUTURI, V33, P450

[9]

SMITH HI, 1978, APPL PHYS LETT, V32, P349, DOI 10.1063/1.90054

[10] SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L23-L26

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