STACKING-FAULT-INDUCED DEFECT CREATION IN SIO2 ON SI(100)

被引：21

作者：

LIEHR, M

BRONNER, GB

LEWIS, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 22期

关键词：

D O I：

10.1063/1.99734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1892 / 1894

页数：3

共 16 条

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[3]

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[4]

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[5]

LAU SS, 1978, J VAC SCI TECHNOL, V155, P1656

[6] KINETICS OF HIGH-TEMPERATURE THERMAL-DECOMPOSITION OF SIO2 ON SI(100) [J].

LIEHR, M ;

LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1559-1562

[7]

LIEHR M, UNPUB

[8] LEAKAGE AND BREAKDOWN IN THIN OXIDE CAPACITORS - CORRELATION WITH DECORATED STACKING-FAULTS [J].

LIN, PSD ;

MARCUS, RB ;

SHENG, TT .

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[9]

RAIDER S, 1986, FAL P M EL SOC SAN D

[10] DEFECT MICROCHEMISTRY AT THE SIO2/SI INTERFACE [J].

RUBLOFF, GW ;

HOFMANN, K ;

LIEHR, M ;

YOUNG, DR .

PHYSICAL REVIEW LETTERS, 1987, 58 (22) :2379-2382

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