DEFECT MICROCHEMISTRY AT THE SIO2/SI INTERFACE

[1] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[2] INTERFACE TRAPS AND PB CENTERS IN OXIDIZED (100) SILICON-WAFERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 348 - 350

[3] THE CHEMICAL-STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE SI/SIO2 INTERFACE BY IONIZING-RADIATION AS DETERMINED BY XPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 747 - 750

[4] HOFMANN K, IN PRESS APPL PHYS L

[5] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95

[6] KOBAYASHI M, 1985, EXTENDED ABSTRACTS E, V851, P94

[7] LIEHR M, IN PRESS J VAC SCI A

[8] RAIDER SI, IN PRESS

[9] AUGER-ELECTRON SPECTROSCOPY STUDIES OF NEAR-INTERFACE SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1300 - 1304

[10] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335

[1] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[2] INTERFACE TRAPS AND PB CENTERS IN OXIDIZED (100) SILICON-WAFERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 348 - 350

[3] THE CHEMICAL-STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE SI/SIO2 INTERFACE BY IONIZING-RADIATION AS DETERMINED BY XPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 747 - 750

[4] HOFMANN K, IN PRESS APPL PHYS L

[5] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95

[6] KOBAYASHI M, 1985, EXTENDED ABSTRACTS E, V851, P94

[7] LIEHR M, IN PRESS J VAC SCI A

[8] RAIDER SI, IN PRESS

[9] AUGER-ELECTRON SPECTROSCOPY STUDIES OF NEAR-INTERFACE SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1300 - 1304

[10] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335