THE CHEMICAL-STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE SI/SIO2 INTERFACE BY IONIZING-RADIATION AS DETERMINED BY XPS

被引：18

作者：

GRUNTHANER, FJ ^{[1
]}

LEWIS, BF ^{[1
]}

MASERJIAN, J ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：747 / 750

页数：4

共 19 条

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[7] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
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[8] GRUNTHANER FJ, 1980, PHYSICS MOS INSULATO, P290
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