SPLITTING OF 1S-EXCITONS IN SILICON

被引：6

作者：

BALSLEV, I ^{[1
]}

机构：

[1] ODENSE UNIV,DEPT PHYS,DK-5230 ODENSE M,DENMARK

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 04期

关键词：

D O I：

10.1016/0038-1098(77)90442-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：205 / 206

页数：2

共 11 条

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[2]

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[3]

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[4] FINE STRUCTURE IN THE ZEEMAN EFFECT OF EXCITONS IN GERMANIUM [J].

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LAX, B .

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[5]

CAPIZZI M, 1976, 13TH P INT C PHYS SE, P857

[6] MASS REVERSAL EFFECT IN SPLIT INDIRECT EXCITON OF GE [J].

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MILLER, RE ;

KANE, EO .

PHYSICAL REVIEW LETTERS, 1975, 34 (25) :1572-1575

[7] TEMPERATURE-DEPENDENCE OF SILICON LUMINESCENCE DUE TO SPLITTING OF INDIRECT GROUND-STATE [J].

HAMMOND, RB ;

SMITH, DL ;

MCGILL, TC .

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[8] ENERGY LEVELS OF INDIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

LIPARI, NO ;

BALDERESCHI, A .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2497-+

[9] EXCITON ENERGY LEVELS IN GERMANIUM AND SILICON [J].

MCLEAN, TP ;

LOUDON, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :1-9

[10] ANALYSIS OF DERIVATIVE SPECTRUM OF INDIRECT EXCITON ABSORPTION IN SILICON [J].

NISHINO, T ;

TAKEDA, M ;

HAMAKAWA, Y .

SOLID STATE COMMUNICATIONS, 1973, 12 (11) :1137-1140

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