X-RAY TRANSMISSION TOPOGRAPHY OF GAAS/INGAAS STRAINED LAYER SUPERLATTICES

被引:5
作者
JONCOUR, MC
MELLET, R
CHARASSE, MN
BURGEAT, J
机构
关键词
D O I
10.1016/0022-0248(86)90042-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:295 / 300
页数:6
相关论文
共 6 条
[1]  
[Anonymous], 1976, XRAY DIFFRACTION TOP
[2]  
[Anonymous], 1956, DISLOCATIONS PLASTIC
[3]   STUDY OF FAULTS IN HETEROEPITAXIAL FILMS OF III-V MATERIALS BY METALLOGRAPHIC ANALYSIS ON THE CHEMICAL LEVEL [J].
HUBER, AM ;
LAURENCIN, G ;
RAZEGHI, M .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :409-414
[4]   MISMATCH AND ELECTRON-MOBILITY IN MBE GAXIN1-XAS EPITAXIAL LAYERS ON INP SUBSTRATES [J].
MASSIES, J ;
SAUVAGESIMKIN, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (01) :27-30
[5]   MISFIT DISLOCATION CHARACTERISTICS IN QUATERNARY HETEROJUNCTIONS GA1-XALXAS1-YPY-GAAS ANALYZED BY SYNCHROTRON RADIATION WHITE BEAM TOPOGRAPHY [J].
PETROFF, JF ;
SAUVAGE, M .
JOURNAL OF CRYSTAL GROWTH, 1978, 43 (05) :628-636
[6]   GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES [J].
QUILLEC, M ;
GOLDSTEIN, L ;
LEROUX, G ;
BURGEAT, J ;
PRIMOT, J .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2904-2909