MISMATCH AND ELECTRON-MOBILITY IN MBE GAXIN1-XAS EPITAXIAL LAYERS ON INP SUBSTRATES

被引：12

作者：

MASSIES, J

SAUVAGESIMKIN, M

机构：

[1] LAB MINERAL CRISTALLOG, F-75230 PARIS 05, FRANCE

[2] LAB UTILSAT RAYONNEMENT ELECTROMAGNET, F-91405 ORSAY, FRANCE

[3] THOMSON CSF, CENT RES LAB, F-91401 ORSAY, FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 32卷 / 01期

关键词：

D O I：

10.1007/BF00626130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：27 / 30

页数：4

共 17 条

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APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149

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[9]

KAWAMURA Y, 1981, J APPL PHYS, V52, P1015

[10] HIGH-MOBILITY GA0.47IN0.53AS THIN EPITAXIAL LAYERS GROWN BY MBE, VERY CLOSELY LATTICE-MATCHED TO INP [J].

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ELECTRONICS LETTERS, 1982, 18 (18) :758-760

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