STUDIES OF AG PHOTODOPING IN GEXSE1-X GLASS USING MICROLITHOGRAPHY TECHNIQUES

被引：40

作者：

LEUNG, W ^{[1
]}

CHEUNG, NW ^{[1
]}

NEUREUTHER, AR ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：481 / 483

页数：3

共 20 条

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ZEMEL, JN .

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[2] ELECTRON-DIFFRACTION STUDIES OF AG PHOTODOPING IN GEXSE1-X GLASS-FILMS [J].

CHEN, CH ;

TAI, KL .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :605-607

[3]

Chopra K. L., 1982, P ELECTROCHEM SOC, V82-9, P129

[4] KINETICS OF PHOTO-DISSOLUTION OF AG IN AMORPHOUS AS2S3 FILMS [J].

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RUDMAN, PS .

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[5] PHOTO-ENHANCED DIFFUSION OF AG IN AMORPHOUS GE2S3 FILMS [J].

ISHIKAWA, R .

SOLID STATE COMMUNICATIONS, 1979, 30 (02) :99-102

[6] PHOTODISSOLUTION OF SILVER IN AMORPHOUS AS2S3 FILMS [J].

JANAI, M .

PHYSICAL REVIEW LETTERS, 1981, 47 (10) :726-729

[7]

JANAI M, 1982, P ELECTROCHEM SOC, V82, P239

[8] DISCUSSION ON MECHANISM OF PHOTODOPING [J].

KOKADO, H ;

SHIMIZU, I ;

INOUE, E .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (01) :131-139

[9]

KOKADO H, 1976, J NONCRYST SOLIDS, V22, P225

[10]

LAMBERTI VE, 1982, P S INORGANIC RESIST, V82, P191

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