200-NM GATED FIELD EMITTERS

被引：10

作者：

HUANG, Z

MCGRUER, NE

WARNER, K

机构：

[1] Department of Electrical and Computer Engineering, Northeastern University, Boston

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

D O I：

10.1109/55.215131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and electrical characteristics of 200-nm chromium-gated silicon field emitters are reported. These gated emitters are the smallest yet reported. A turn-on voltage of approximately 35 V represents a sublinear scaling of device operating voltage with device size. Emitter failures appear to be very similar to failures of 2-mum devices produced using the same process.

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收藏

页码：121 / 122

页数：2

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