CHARACTERIZATION OF LOW-PRESSURE CHEMICALLY VAPOUR-DEPOSITED THIN SILICON-NITRIDE FILMS

被引：8

作者：

POPOVA, LI ^{[1
]}

ANTOV, BZ ^{[1
]}

SHOPOV, AV ^{[1
]}

SOTIROVA, MS ^{[1
]}

BESHKOV, GD ^{[1
]}

STEFANOV, EN ^{[1
]}

机构：

[1] INST MICROELECTR, BU-1184 SOFIA, BULGARIA

来源：

THIN SOLID FILMS | 1984年 / 122卷 / 02期

关键词：

D O I：

10.1016/0040-6090(84)90005-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SILICON COMPOUNDS

引用

页码：153 / 163

页数：11

共 18 条

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[8] PHYSICOCHEMICAL PROPERTIES OF CHEMICAL VAPOR-DEPOSITED SILICON OXYNITRIDE FROM A SIH4-CO2-NH3-H2 SYSTEM [J].

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[10] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

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