NONLINEAR ALTERNATING-CURRENT TUNNELING MICROSCOPY

[1] COULOMB BLOCKADE OF SINGLE-ELECTRON TUNNELING, AND COHERENT OSCILLATIONS IN SMALL TUNNEL-JUNCTIONS [J]. JOURNAL OF LOW TEMPERATURE PHYSICS, 1986, 62 (3-4) : 345 - 373

[2] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &

[3] ATOMIC FORCE MICROSCOPE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (09) : 930 - 933

[4] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[5] PROPERTIES OF VACUUM TUNNELING CURRENTS - ANOMALOUS BARRIER HEIGHTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (05) : 455 - 459

[6] A MULTILAYER MODEL FOR GAAS OXIDES FORMED AT ROOM-TEMPERATURE IN AIR AS DEDUCED FROM AN XPS ANALYSIS [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 13 - 16

[7] ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1719 - 1726

[8] ERLANDSSON P, 1988, J VAC SCI TECHNOL A, V6, P266

[9] ATOMIC FORCE MICROSCOPY - GENERAL-ASPECTS AND APPLICATION TO INSULATORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 275 - 278

[10] CHARACTERIZATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1987, 181 (1-2) : 333 - 339

[1] COULOMB BLOCKADE OF SINGLE-ELECTRON TUNNELING, AND COHERENT OSCILLATIONS IN SMALL TUNNEL-JUNCTIONS [J]. JOURNAL OF LOW TEMPERATURE PHYSICS, 1986, 62 (3-4) : 345 - 373

[2] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &

[3] ATOMIC FORCE MICROSCOPE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (09) : 930 - 933

[4] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[5] PROPERTIES OF VACUUM TUNNELING CURRENTS - ANOMALOUS BARRIER HEIGHTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (05) : 455 - 459

[6] A MULTILAYER MODEL FOR GAAS OXIDES FORMED AT ROOM-TEMPERATURE IN AIR AS DEDUCED FROM AN XPS ANALYSIS [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 13 - 16

[7] ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1719 - 1726

[8] ERLANDSSON P, 1988, J VAC SCI TECHNOL A, V6, P266

[9] ATOMIC FORCE MICROSCOPY - GENERAL-ASPECTS AND APPLICATION TO INSULATORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 275 - 278

[10] CHARACTERIZATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1987, 181 (1-2) : 333 - 339