PULSED-LASER IRRADIATED SILICON STUDIED BY TIME-RESOLVED X-RAY ABSORPTION (90-300 EV)

被引：46

作者：

MURAKAMI, K ^{[1
]}

GERRITSEN, HC ^{[1
]}

VANBRUG, H ^{[1
]}

BIJKERK, F ^{[1
]}

SARIS, FW ^{[1
]}

VANDERWIEL, MJ ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.56.655

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：655 / 658

页数：4

共 14 条

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