THE PREPARATION OF MATERIALS FOR OPTOELECTRONIC APPLICATIONS BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

TSANG, WT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572355

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：409 / 414

页数：6

共 49 条

[1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ALAVI, K ;

TEMKIN, H ;

WAGNER, WR ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :254-256

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES [J].

ASAHI, H ;

KAWAMURA, Y ;

IKEDA, M ;

OKAMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2852-2859

[3]

ASHAI H, 1982, OCT INT SEM LAS C OT

[4] PREPARATION AND PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN (AL0.5GA0.5)0.48IN0.52AS [J].

BARNARD, JA ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1982, 3 (10) :318-319

[5] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[6] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[7] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].

CAPASSO, F ;

TSANG, WT ;

WILLIAMS, GF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390

[8] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J].

CAPASSO, F ;

TSANG, WT ;

BETHEA, CG ;

HUTCHINSON, AL ;

LEVINE, BF .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :93-95

[9]

CAPASSO F, 1982, I PHYS C SER, V63, P473

[10] BIAS-FREE SELECTIVELY DOPED ALXGA1-XAS-GAAS PICOSECOND PHOTODETECTORS [J].

CHEN, CY ;

CHO, AY ;

BETHEA, CG ;

GARBINSKI, PA .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :282-284

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