OXYGEN RELATED MECHANISM OF REVERSE ANNEALING FOR BORON IMPLANTS IN SILICON

被引：2

作者：

GREGORKIEWICZ, T ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

机构：

[1] UNIV AMSTERDAM,NATUURKUNDIG LAB,1018 XE AMSTERDAM,NETHERLANDS

来源：

RADIATION EFFECTS LETTERS | 1985年 / 85卷 / 06期

关键词：

D O I：

10.1080/01422448508209699

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：249 / 254

页数：6

共 25 条

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