OXIDATION OF SILICON IN DRY OXYGEN

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[2] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[3] ATALLA MM, PROPERTIES ELEMENTAL, V5, P163

[4] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 983 - 987

[5] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[6] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) : 1064 - 1067

[7] GARNER WE, 1955, CHEMISTRY SOLID STAT

[8] GATOS H, PROPERTIES ELEMENTAL, V5, P163

[9] GRIMLEY TB, 1955, CHEMISTRY SOLID STAT

[10] THE OXIDATION BEHAVIOR OF TANTALUM AT 700-DEGREES-C-1000-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 491 - 501

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[2] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[3] ATALLA MM, PROPERTIES ELEMENTAL, V5, P163

[4] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 983 - 987

[5] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[6] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) : 1064 - 1067

[7] GARNER WE, 1955, CHEMISTRY SOLID STAT

[8] GATOS H, PROPERTIES ELEMENTAL, V5, P163

[9] GRIMLEY TB, 1955, CHEMISTRY SOLID STAT

[10] THE OXIDATION BEHAVIOR OF TANTALUM AT 700-DEGREES-C-1000-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 491 - 501