EXPERIMENTAL CHARACTERIZATION OF GOLD-DOPED INFRARED-SENSING MOSFETS

被引：8

作者：

PARKER, WC ^{[1
]}

FORBES, L ^{[1
]}

机构：

[1] UNIV ARKANSAS, DEPT ELECT ENGN, FAYETTEVILLE, AR 72701 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 10期

关键词：

D O I：

10.1109/T-ED.1975.18242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：916 / 924

页数：9

共 23 条

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[18] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

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FORBES, L ;

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[19]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P654

[20] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

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