CHARGE TRAPPING AND DIELECTRIC-BREAKDOWN IN MOS DEVICES IN 77-400K TEMPERATURE-RANGE

被引：6

作者：

HUANG, CL

GROT, SA

GILDENBLAT, GS

BOLKHOVSKY, V

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

[2] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 09期

关键词：

D O I：

10.1016/0038-1101(89)90011-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：767 / 775

页数：9

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