EFFECTS OF EXCITATION-INDUCED OPTICAL-ABSORPTION IN HIGHLY EXCITED SEMICONDUCTORS

被引：27

作者：

KUSHIDA, T

MORIYA, T

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO,JAPAN

[2] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 72卷 / 01期

关键词：

D O I：

10.1002/pssb.2220720143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：385 / 391

页数：7

共 29 条

[1]

Benoit C., 1969, PHYS REV, V177, P567

[2] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J].

DINGLE, R ;

SHAKLEE, KL ;

LEHENY, RF ;

ZETTERSTROM, RB .

APPLIED PHYSICS LETTERS, 1971, 19 (01) :5-+

[3] STIMULATED EMISSION SPECTRA OF CDS PLATELETS UNDER VARIOUS EXCITATION LEVELS [J].

ERA, K ;

LANGER, DW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) :1021-&

[4] LASER EMISSION DUE TO EXCITONIC RECOMBINATION PROCESSES IN HIGH-PURITY GAAS [J].

GOBEL, E ;

HERZOG, H ;

PILKUHN, MH ;

ZSCHAUER, KH .

SOLID STATE COMMUNICATIONS, 1973, 13 (06) :719-722

[5] DOPING-DEPENDENCE OF LUMINESCENCE IN INP AT VERY HIGH EXCITATION LEVELS [J].

GOBEL, E ;

QUEISSER, HJ ;

PILKUHN, MH .

SOLID STATE COMMUNICATIONS, 1971, 9 (07) :429-&

[6] INDUCED ABSORPTION IN PRESENCE OF HIGH ELECTRONIC EXCITATION [J].

GOTO, T ;

LANGER, DW .

PHYSICAL REVIEW LETTERS, 1971, 27 (15) :1004-&

[7] GIANT 2-PHOTON ABSORPTION DUE TO EXCITONIC MOLECULE [J].

HANAMURA, E .

SOLID STATE COMMUNICATIONS, 1973, 12 (09) :951-953

[8] EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP [J].

HEIM, U ;

RODER, O ;

PILKUHN, MH .

SOLID STATE COMMUNICATIONS, 1969, 7 (17) :1173-&

[9]

HIGASHIDA M, 1975, THESIS U TOKYO

[10]

HILDEBRAND O, 1974, 12TH P INT C PHYS SE, P147

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