DIFFUSION OF SILVER IN C-60 THIN-FILMS

被引：26

作者：

SARKAR, D ^{[1
]}

HALAS, NJ ^{[1
]}

机构：

[1] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期

关键词：

D O I：

10.1063/1.110471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion of silver atoms into C60 solid thin films is observed. The diffusion process is significant at temperatures just above room temperature, with an activation energy of 2.5 +/- 0.5 eV (60 kcal/mol). Temperature dependent conductivity measurements indicate that silver atoms form an impurity band in solid C60 with an activation energy of 0.26 eV. The ready interdiffusion of silver and C60 may have important implications in the formation of C60/metal contacts or C60/metal layered structures or materials.

引用

页码：2438 / 2440

页数：3

共 19 条

[1]

Boltaks B.I., 1963, DIFFUSION SEMICONDUC

[2]

CHEN HS, 1993, B AM PHYS SOC, V38, P152

[3] EFFECTS OF OXYGEN AND ILLUMINATION ON THE INSITU CONDUCTIVITY OF C-60 THIN-FILMS [J].