Effect of Post-Annealing on the Microstructure and Electrical Properties of PMN-PZT Films Prepared by Aerosol Deposition Process

被引：7

作者：

Hahn, Byung-Dong ^{[1
]}

Ko, Kwan-Ho ^{[2
]}

Park, Dong-Soo ^{[1
]}

Choi, Jong-Jin ^{[1
]}

Yoon, Woon-Ha ^{[1
]}

Park, Chan ^{[2
]}

Kim, Doh-Yeon ^{[3
]}

机构：

[1] Korea Inst Machinery & Mat, Dept Future Technol, Gyeongnam 641010, South Korea

[2] Pukyong Natl Univ, Div Mat Sci & Engn, Busan 608739, South Korea

[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

JOURNAL OF THE KOREAN CERAMIC SOCIETY | 2006年 / 43卷 / 02期

关键词：

PMN-PZT films; Aerosol deposition process; Post-annealing process; Electrical Properties;

D O I：

10.4191/kcers.2006.43.2.106

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

PMN-PZT films with thickness of 5 mu m were deposited on Pt/Ti/SiO2/Si substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at 700 degrees C for 1 h exhibited the best electrical properties. Dielectric constant (epsilon(r)), remanent polarization (P-r) and piezoelectric constant (d(33)) were 1050, 13 mu C/cm(2) and 120 pC/N, respectively.

引用

页码：106 / 113

页数：8

共 29 条

[1] Microstructure and electrical properties of lead zirconate titanate (Pb(Zr52/Ti48)O3) thick films deposited by aerosol deposition method [J].

Akedo, J ;

Lebedev, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B) :5397-5401

[2]

Akedo J, 2003, MATER RES SOC SYMP P, V778, P289

[3] Effects of annealing and poling conditions on piezoelectric properties of Pb(Zr0.52,Ti0.48)O3 thick films formed by aerosol deposition method [J].

Akedo, J ;

Lebedev, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) :415-420

[4]

Akedo J, 1999, FERROELECTRICS, V231, P873, DOI 10.1080/00150199908014545

[5] Characterization of thick lead zirconate titanate films fabricated using a new sol gel based process [J].

Barrow, DA ;

Petroff, TE ;

Tandon, RP ;

Sayer, M .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :876-881

[6] Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems [J].

Beeby, SP ;

Blackburn, A ;

White, NM .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1999, 9 (03) :218-229

[7] Fabrication and electrical properties of lead zirconate titanate thick films [J].

Chen, HD ;

Udayakumar, KR ;

Gaskey, CJ ;

Cross, LE ;

Bernstein, JJ ;

Niles, LC .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (08) :2189-2192

[8] DIELECTRIC, FERROELECTRIC, AND PIEZOELECTRIC PROPERTIES OF LEAD-ZIRCONATE-TITANATE THICK-FILMS ON SILICON SUBSTRATES [J].

CHEN, HD ;

UDAYAKUMAR, KR ;

CROSS, LE ;

BERNSTEIN, JJ ;

NILES, LC .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3349-3353

[9] PZT 'composite' ferroelectric thick films [J].

Corker, DL ;

Zhang, Q ;

Whatmore, RW ;

Perrin, C .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2002, 22 (03) :383-390

[10] Electroceramic thick film fabrication for MEMS [J].

Dorey, RA ;

Whatmore, RW .

JOURNAL OF ELECTROCERAMICS, 2004, 12 (1-2) :19-32

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