SIMS ANALYSIS OF EVAPORATED INDIUM CONTACTS ON (HGCD)TE

被引：4

作者：

DEMANET, CM ^{[1
]}

STRYDOM, HJ ^{[1
]}

BASSON, JH ^{[1
]}

BOTHA, AP ^{[1
]}

STANDER, CM ^{[1
]}

机构：

[1] CSIR,NATL INST MAT RES,PRETORIA,SOUTH AFRICA

来源：

APPLIED SURFACE SCIENCE | 1986年 / 25卷 / 03期

关键词：

D O I：

10.1016/0169-4332(86)90060-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：279 / 287

页数：9

共 16 条

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[3]

DEMANET CM, 1985, UNPUB PHYS STATUS A, V90, pK131

[4]

Gorshkov A. V., 1983, Soviet Physics - Solid State, V25, P1532

[5]

HANAFI HI, 1978, IEEE T ELECTRON DEVI, V25, P141

[6]

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[7] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].

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[8] SECONDARY-ION MASS-SPECTROMETRY AND ITS USE IN DEPTH PROFILING [J].

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[9] ION MICROPROBE MASS ANALYZER [J].

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JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5277-&

[10] DIFFUSION OF INDIUM IN HG1-XCDXTE [J].

MARGALIT, S ;

NEMIROVSKY, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1406-1408

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