PROPERTIES OF 2D QUANTUM-WELL LASERS

[1] CASEY HC, 1974, J APPL PHYS, V45, P1

[2] MODAL-ANALYSIS OF GRIN-SCH AND TRIANGULAR-WELL WAVEGUIDES [J]. APPLIED OPTICS, 1984, 23 (20): : 3508 - 3509

[3] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1243 - 1246

[4] FABRICATION AND PERFORMANCE-CHARACTERISTICS OF INGAASP MULTIQUANTUM WELL DOUBLE CHANNEL PLANAR BURIED HETEROSTRUCTURE LASERS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 19 - 21

[5] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119

[6] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478

[7] VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 870 - 871

[8] HERSEE SD, 1980, I PHYS C SERIES, V65, P281

[9] EVIDENCE OF NO K-SELECTION IN GAIN SPECTRA OF QUANTUM WELL ALGAAS LASER-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (01) : 24 - 28

[10] RAZEGHI M, 1984, I PHYS C SERIES, V74, P379

[1] CASEY HC, 1974, J APPL PHYS, V45, P1

[2] MODAL-ANALYSIS OF GRIN-SCH AND TRIANGULAR-WELL WAVEGUIDES [J]. APPLIED OPTICS, 1984, 23 (20): : 3508 - 3509

[3] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1243 - 1246

[4] FABRICATION AND PERFORMANCE-CHARACTERISTICS OF INGAASP MULTIQUANTUM WELL DOUBLE CHANNEL PLANAR BURIED HETEROSTRUCTURE LASERS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 19 - 21

[5] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119

[6] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478

[7] VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 870 - 871

[8] HERSEE SD, 1980, I PHYS C SERIES, V65, P281

[9] EVIDENCE OF NO K-SELECTION IN GAIN SPECTRA OF QUANTUM WELL ALGAAS LASER-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (01) : 24 - 28

[10] RAZEGHI M, 1984, I PHYS C SERIES, V74, P379