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HIGHLY THERMALLY STABLE ELECTRICAL COMPENSATION IN OXYGEN IMPLANTED P-INALAS

被引：7
作者：
KRAUZ, P
RAO, EVK
THIBIERGE, H
HARMAND, JC
机构：
[1] France Telecom, Centre National d'Etudes des Télécommunications, Bagneux
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 08期
关键词：
D O I：
10.1063/1.108549
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical compensation induced by oxygen ion implants in Be doped p-type In0.52Al0.48As epilayers has been investigated. By performing hot implants (approximately 250-degrees-C) and high temperature (as high as 800-degrees-C) furnace anneals, we have ascertained the formation of thermally stable electrically compensated layers. Similar data obtained by varying oxygen implant dose and Be background doping level are permitted to confirm unambiguously the involvement of oxygen atoms in the compensation mechanism. These results are satisfactorily explained assuming the formation of a deep donor center involving the participation of oxygen atoms.
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页码：867 / 869
页数：3
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