O+ IMPLANTATION AND ANNEALING IN N-TYPE INALAS

被引：8

作者：

LEE, W ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 18期

关键词：

D O I：

10.1063/1.97883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1278 / 1280

页数：3

共 10 条

[1] COLLECTOR-UP HBTS FABRICATED BY BE+ AND O+ ION IMPLANTATIONS [J].

ADACHI, S ;

ISHIBASHI, T .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :32-34

[2] BE+/O+-ION IMPLANTATION IN GAAS-ALGAAS HETEROJUNCTIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :959-964

[3] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].

ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[4] BEHAVIOR OF BURIED OXYGEN IMPLANTED LAYERS IN HIGHLY DOPED GAAS [J].

BENEKING, H ;

GROTE, N ;

KRAUTLE, H .

SOLID-STATE ELECTRONICS, 1979, 22 (12) :1039-1043

[5]

FAVENNEC PN, 1975, ION IMPLANTATION SEM, P65

[6] CARRIER REMOVAL PROFILES FROM OXYGEN IMPLANTED GAAS [J].

GECIM, S ;

SEALY, BJ ;

STEPHENS, KG .

ELECTRONICS LETTERS, 1978, 14 (10) :306-308

[7] THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

LEE, W ;

FONSTAD, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :536-538

[8]

LEE W, 1987, IEEE ELECTRON DE MAY

[9]

LEE W, 1987, J APPL PHYS 0601

[10]

PAULSON WM, 1982, 1982 GAAS IC S, P166

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