HOT-ELECTRON EMISSION FROM N-SILICON

被引：10

作者：

DAVIES, EA

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(64)90080-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：201 / +

页数：1

共 34 条

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[5] TRANSIENT ANALYSIS OF THE WHITE CATHODE FOLLOWER
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[7] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON
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[J]. PHYSICAL REVIEW, 1957, 108 (01): : 29 - 34
[8] NON-OHMIC BEHAVIOUR IN SILICON
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[9] DYKMAN IM, 1962, SOV PHYS-SOL STATE, V3, P1393
[10] DYKMAN IM, 1961, SOV PHYS-SOL STATE, V3, P464