PROXIMITY EFFECT CORRECTION CALCULATIONS BY THE INTEGRAL-EQUATION APPROXIMATE SOLUTION METHOD

被引：46

作者：

PAVKOVICH, JM

机构：

[1] Varian Associates, Palo Alto, CA,, USA, Varian Associates, Palo Alto, CA, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：159 / 163

页数：5

共 6 条

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[2] SILICON TRANSFER LAYER FOR MULTILAYER RESIST SYSTEMS
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CHANG, MS
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[3] PROXIMITY EFFECT CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSE
OWEN, G
RISSMAN, P
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3573 - 3581
[4] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY
PARIKH, M
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4371 - 4377
[5] THE USE OF BIAS IN ELECTRON-BEAM LITHOGRAPHY FOR IMPROVED PROFILE QUALITY AND LINEWIDTH CONTROL
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NEUREUTHER, AR
TING, CH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1242 - 1247
[6] WITTELS ND, 1978, 8TH P INT C EL ION B, P361