THE USE OF BIAS IN ELECTRON-BEAM LITHOGRAPHY FOR IMPROVED PROFILE QUALITY AND LINEWIDTH CONTROL

被引：12

作者：

ROSENFIELD, MG ^{[1
]}

NEUREUTHER, AR ^{[1
]}

TING, CH ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1242 / 1247

页数：6

共 14 条

[1] CHANG TS, UNPUBLISHED
[2] IMPACT OF ELECTRON-SCATTERING ON LINEWIDTH CONTROL IN ELECTRON-BEAM LITHOGRAPHY
GREENEICH, JS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1749 - 1753
[3] COMPUTER-SIMULATION OF ELECTRON-BEAM RESIST PROFILES
KYSER, DF
PYLE, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 426 - 437
[4] ELECTRON-BEAM RESIST EDGE PROFILE SIMULATION
NEUREUTHER, AR
KYSER, DF
TING, CH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 686 - 693
[5] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
OLDHAM, WG
NANDGAONKAR, SN
NEUREUTHER, AR
OTOOLE, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 717 - 722
[6] A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING
OLDHAM, WG
NEUREUTHER, AR
SUNG, C
REYNOLDS, JL
NANDGAONKAR, SN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1455 - 1459
[7] PATTERN PARTITIONING FOR ENHANCED PROXIMITY-EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY
PARIKH, M
SCHREIBER, DE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (05) : 530 - 536
[8] CALCULATION OF CHANGES IN PATTERN DIMENSIONS TO COMPENSATE FOR PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY
PARIKH, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 705 - 709
[9] PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY - MAGNITUDE AND CORRECTION TECHNIQUES
PARIKH, M
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 438 - 457
[10] ROSENFIELD MG, UNPUBLISHED

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