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THE USE OF BIAS IN ELECTRON-BEAM LITHOGRAPHY FOR IMPROVED PROFILE QUALITY AND LINEWIDTH CONTROL
被引:12
作者
:
ROSENFIELD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
ROSENFIELD, MG
[
1
]
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
NEUREUTHER, AR
[
1
]
TING, CH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
TING, CH
[
1
]
机构
:
[1]
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1981年
/ 19卷
/ 04期
关键词
:
D O I
:
10.1116/1.571253
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1242 / 1247
页数:6
相关论文
共 14 条
[1]
CHANG TS, UNPUBLISHED
[2]
IMPACT OF ELECTRON-SCATTERING ON LINEWIDTH CONTROL IN ELECTRON-BEAM LITHOGRAPHY
GREENEICH, JS
论文数:
0
引用数:
0
h-index:
0
GREENEICH, JS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979,
16
(06):
: 1749
-
1753
[3]
COMPUTER-SIMULATION OF ELECTRON-BEAM RESIST PROFILES
KYSER, DF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
KYSER, DF
PYLE, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
PYLE, R
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1980,
24
(04)
: 426
-
437
[4]
ELECTRON-BEAM RESIST EDGE PROFILE SIMULATION
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
NEUREUTHER, AR
KYSER, DF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
KYSER, DF
TING, CH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
TING, CH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 686
-
693
[5]
GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OLDHAM, WG
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NANDGAONKAR, SN
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NEUREUTHER, AR
OTOOLE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OTOOLE, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 717
-
722
[6]
A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
NEUREUTHER, AR
SUNG, C
论文数:
0
引用数:
0
h-index:
0
SUNG, C
REYNOLDS, JL
论文数:
0
引用数:
0
h-index:
0
REYNOLDS, JL
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
NANDGAONKAR, SN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
: 1455
-
1459
[7]
PATTERN PARTITIONING FOR ENHANCED PROXIMITY-EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY
PARIKH, M
论文数:
0
引用数:
0
h-index:
0
PARIKH, M
SCHREIBER, DE
论文数:
0
引用数:
0
h-index:
0
SCHREIBER, DE
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1980,
24
(05)
: 530
-
536
[8]
CALCULATION OF CHANGES IN PATTERN DIMENSIONS TO COMPENSATE FOR PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY
PARIKH, M
论文数:
0
引用数:
0
h-index:
0
PARIKH, M
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 705
-
709
[9]
PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY - MAGNITUDE AND CORRECTION TECHNIQUES
PARIKH, M
论文数:
0
引用数:
0
h-index:
0
PARIKH, M
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1980,
24
(04)
: 438
-
457
[10]
ROSENFIELD MG, UNPUBLISHED
←
1
2
→
共 14 条
[1]
CHANG TS, UNPUBLISHED
[2]
IMPACT OF ELECTRON-SCATTERING ON LINEWIDTH CONTROL IN ELECTRON-BEAM LITHOGRAPHY
GREENEICH, JS
论文数:
0
引用数:
0
h-index:
0
GREENEICH, JS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979,
16
(06):
: 1749
-
1753
[3]
COMPUTER-SIMULATION OF ELECTRON-BEAM RESIST PROFILES
KYSER, DF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
KYSER, DF
PYLE, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP,E FISHKILL FACIL,DATA SYST DIV LAB,HOPEWELL JUNCTION,NY 12533
PYLE, R
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1980,
24
(04)
: 426
-
437
[4]
ELECTRON-BEAM RESIST EDGE PROFILE SIMULATION
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
NEUREUTHER, AR
KYSER, DF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
KYSER, DF
TING, CH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
TING, CH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 686
-
693
[5]
GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OLDHAM, WG
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NANDGAONKAR, SN
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NEUREUTHER, AR
OTOOLE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OTOOLE, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 717
-
722
[6]
A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
NEUREUTHER, AR
SUNG, C
论文数:
0
引用数:
0
h-index:
0
SUNG, C
REYNOLDS, JL
论文数:
0
引用数:
0
h-index:
0
REYNOLDS, JL
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
NANDGAONKAR, SN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
: 1455
-
1459
[7]
PATTERN PARTITIONING FOR ENHANCED PROXIMITY-EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY
PARIKH, M
论文数:
0
引用数:
0
h-index:
0
PARIKH, M
SCHREIBER, DE
论文数:
0
引用数:
0
h-index:
0
SCHREIBER, DE
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1980,
24
(05)
: 530
-
536
[8]
CALCULATION OF CHANGES IN PATTERN DIMENSIONS TO COMPENSATE FOR PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY
PARIKH, M
论文数:
0
引用数:
0
h-index:
0
PARIKH, M
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
: 705
-
709
[9]
PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY - MAGNITUDE AND CORRECTION TECHNIQUES
PARIKH, M
论文数:
0
引用数:
0
h-index:
0
PARIKH, M
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1980,
24
(04)
: 438
-
457
[10]
ROSENFIELD MG, UNPUBLISHED
←
1
2
→