2-DIMENSIONAL ELECTRON-LATTICE SCATTERING IN THERMALLY OXIDIZED SILICON SURFACE-INVERSION LAYERS

被引：42

作者：

WU, CY ^{[1
]}

THOMAS, G ^{[1
]}

机构：

[1] SUNY, DEPT ELECTR SCI, STONY BROOK, NY 11790 USA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.9.1724

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1724 / 1732

页数：9

相关论文

共 27 条

[1] SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS
CHENG, YC
SULLIVAN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 923 - 925
[2] CONWELL EM, 1967, SOLID STATE PHYS S, V9, P106
[3] SURFONS AND ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
EZAWA, H
KAWAJI, S
NAKAMURA, K
[J]. SURFACE SCIENCE, 1971, 27 (01) : 218 - &
[4] ELECTRONS AND SURFONS IN A SEMICONDUCTOR INVERSION LAYER
EZAWA, H
KURODA, T
NAKAMURA, K
[J]. SURFACE SCIENCE, 1971, 24 (02) : 654 - &
[5] EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN INVERSION LAYER ON P-TYPE SILICON ( TRANSVERSE ELECTRIC FIELD EFFECT ON CARRIER MOBILITY E/T )
FANG, F
TRIEBWASSER, S
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (08) : 145 - &
[6] CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS
FANG, F
TRIEBWASSER, S
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 410 - &
[7] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES
FANG, FF
HOWARD, WE
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &
[8] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
FANG, FF
FOWLER, AB
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
[9] FANG FF, PRIVATE COMMUNICATIO
[10] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES
FOWLER, AB
FANG, FF
HOWARD, WE
STILES, PJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &