HIGH-SPEED ELLIPSOMETRY OF ARSENIC-IMPLANTED SI DURING CW LASER ANNEALING

被引：9

作者：

MORITANI, A ^{[1
]}

HAMAGUCHI, C ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECTR ENGN,SUITA,OSAKA 565,JAPAN

来源：

关键词：

D O I：

10.1063/1.95495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：746 / 748

页数：3

共 14 条

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OLSON, GL ;

KOKOROWSKI, SA ;

MCFARLANE, RA ;

HESS, LD .

[13]

Roth J. A., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P413

SUGIMOTO, K ;

MATSUDA, S .