ULTRAFAST LONG-WAVELENGTH PHOTODETECTORS FABRICATED ON LOW-TEMPERATURE INGAAS ON GAAS

被引：39

作者：

LESTER, LF

HWANG, KC

HO, P

MAZUROWSKI, J

BALLINGALL, JM

SUTLIFF, J

GUPTA, S

WHITAKER, J

WILLIAMSON, SL

机构：

[1] GE CO,CTR CORP RES & DEV,SCHENECTADY,NY 12301

[2] UNIV MICHIGAN,CTR ULTRAFAST OPT SCI,ANN ARBOR,MI 48109

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 05期

关键词：

D O I：

10.1109/68.215265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first successful demonstration of a metal-semiconductor-metal photodetector (MSMPD) fabricated on low-temperature InGaAs grown on GaAs by molecular beam epitaxy (MBE) for long wavelength fiber optic applications. Interdigitated MSMPD's with finger widths and spacings of 0.2, 0.5, 1.0, and 2.0-mum have been tested using a femtosecond pulsed laser and high-speed electrooptic sampling. A FWHM pulsed response of 2 and 1.3 ps has been measured from low temperature In0.25Ga0.75As and In0.35Ga0.65As, respectively. The latter is the fastest response reported to data for a photodetector capable of detection to wavelengths as long as 13 mum.

引用

页码：511 / 514

页数：4

共 15 条

[11] HIGH-SPEED 1.3-MU-M GAINAS DETECTORS FABRICATED ON GAAS SUBSTRATES [J].