A MODEL-BASE COMPARISON - GAAS GAALAS HBT VERSUS SILICON BIPOLAR

被引：4

作者：

KURATA, M

KATOH, R

YOSHIDA, J

AKAGI, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1413 / 1420

页数：8

共 11 条

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