COMPUTER-ANALYSIS OF BACK-SURFACE FIELD SILICON SOLAR CELLS

被引:19
作者
MICHEL, J [1 ]
MIRCEA, A [1 ]
FABRE, E [1 ]
机构
[1] LAB ELECTR & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL BREVANNES,FRANCE
关键词
D O I
10.1063/1.321496
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5043 / 5045
页数:3
相关论文
共 9 条
[1]  
GODLEWSKI MP, 1973, 10TH IEEE PHOT SPEC
[2]  
MANDELKORN J, 1973, 10TH IEEE PHOT SPEC
[3]  
MANDELKORN J, 1972, 9 IEEE PHOT SPEC C
[4]   THE POTENTIALITIES OF SILICON AND GALLIUM ARSENIDE SOLAR BATTERIES [J].
MOSS, TS .
SOLID-STATE ELECTRONICS, 1961, 2 (04) :222-231
[5]  
RALPH EL, 1974, INT C PHOTOVOLTAIC P
[6]   THERMAL GENERATION OF RECOMBINATION CENTERS IN SILICON [J].
ROSS, B ;
MADIGAN, JR .
PHYSICAL REVIEW, 1957, 108 (06) :1428-1433
[7]   RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].
SZE, SM ;
IRVIN, JC .
SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&
[8]   NEW LOOK AT SILICON SOLAR CELL PERFORMANCE [J].
WOLF, M .
ENERGY CONVERSION, 1971, 11 (02) :63-&
[9]   DRIFT FIELDS IN PHOTOVOLTAIC SOLAR ENERGY CONVERTER CELLS [J].
WOLF, M .
PROCEEDINGS OF THE IEEE, 1963, 51 (05) :674-&