ELECTROMIGRATION IN A SINGLE CRYSTALLINE SUBMICRON WIDTH ALUMINUM INTERCONNECTION

被引：66

作者：

SHINGUBARA, S ^{[1
]}

NAKASAKI, Y ^{[1
]}

KANEKO, H ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.104431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration properties in a single crystalline submicron width aluminum interconnection formed on Si(111) have been examined by resistance change measurements and in situ observations using scanning electron microscopy. It was observed that single crystalline aluminum has an extremely high resistance to electromigration-induced open circuit failures, when compared to polycrystalline copper and aluminum. The mechanism for the high resistance is considered to be a large activation energy, resulting from lattice diffusion. A tendency for void formation to become parallel to the longitudinal direction of the interconnection assisted the life time prolongation.

引用

页码：42 / 44

页数：3

共 10 条

[1] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].

BLACK, JR .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&

[2]

D'Heurle F., 1970, Applied Physics Letters, V16, P80, DOI 10.1063/1.1653108

[3]

d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243

[4]

Hasunuma M., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P677, DOI 10.1109/IEDM.1989.74370

[5]

HOSHINO K, 1989, 8TH P IEEE VLSI MULT, P226

[6] EPITAXIAL-GROWTH OF AL ON SI BY GAS-TEMPERATURE-CONTROLLED CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, T ;

SEKIGUCHI, A ;

HOSOKAWA, N ;

ASAMAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1775-L1777

[7]

Lloyd J. R., 1988, 26th Annual Proceedings. Reliability Physics 1988 (Cat. No.88CH2508-0), P216, DOI 10.1109/RELPHY.1988.23453

[8]

MAGROCAMPERO A, 1982, J APPL PHYS, V53, P1224

[9] ACTIVATION-ENERGIES FOR THE DIFFERENT ELECTROMIGRATION MECHANISMS IN ALUMINUM [J].

SCHREIBER, HU .

SOLID-STATE ELECTRONICS, 1981, 24 (06) :583-&

[10] GAS-TEMPERATURE-CONTROLLED (GTC) CVD OF ALUMINUM AND ALUMINUM-SILICON ALLOY FILM FOR VLSI PROCESSING [J].

SEKIGUCHI, A ;

KOBAYASHI, T ;

HOSOKAWA, N ;

ASAMAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2134-L2136

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