FE-DOPED SEMIINSULATING INP GROWN BY CHLORIDE VAPOR-PHASE EPITAXY

[11] GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1635 - 1640

[12] HIGH-RESISTIVITY (GREATER-THAN-10(5)-OMEGA-CM) INP LAYERS BY LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (04) : 378 - 380

[13] SUGAWARA M, 1986, SEMIINSULATING 3 5 M, P597

[14] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1127 - 1129

[15] PLANAR VPE INFILL 1.3-MU-M INTEGRATED LASER MONITOR PHOTODIODE WITH CARIBE ETCHED FACETS [J]. ELECTRONICS LETTERS, 1986, 22 (09) : 472 - 473

[16] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH [J]. ELECTRONICS LETTERS, 1986, 22 (16) : 869 - 870

[11] GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1635 - 1640

[12] HIGH-RESISTIVITY (GREATER-THAN-10(5)-OMEGA-CM) INP LAYERS BY LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (04) : 378 - 380

[13] SUGAWARA M, 1986, SEMIINSULATING 3 5 M, P597

[14] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1127 - 1129

[15] PLANAR VPE INFILL 1.3-MU-M INTEGRATED LASER MONITOR PHOTODIODE WITH CARIBE ETCHED FACETS [J]. ELECTRONICS LETTERS, 1986, 22 (09) : 472 - 473

[16] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH [J]. ELECTRONICS LETTERS, 1986, 22 (16) : 869 - 870