CARRIER DIFFUSION EFFECTS IN TIME-RESOLVED PHOTOLUMINESCENCE

被引：8

作者：

BAILEY, DW ^{[1
]}

STANTON, CJ ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT PHYS,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.106492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We model time-resolved photoluminescence in GaAs using an ensemble Monte Carlo method coupled with a k.p calculation of the band structure. We show that on a picosecond scale, carrier diffusion perpendicular to the layer significantly reduces the density at the surface and consequently has a first-order effect on luminescence measurements. To illustrate this we compare the calculated luminescence, with and without diffusion, to experimental data.

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页码：880 / 882

页数：3

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