MODELING OF DOPANT DIFFUSION IN SILICON - AN EFFECTIVE DIFFUSIVITY APPROACH INCLUDING POINT-DEFECT COUPLINGS

被引:23
作者
MATHIOT, D [1 ]
MARTIN, S [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE
关键词
D O I
10.1063/1.349312
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a simplified model for dopant diffusion in silicon in the presence of nonequilibrium point defects. In this model, the dopant flux is expressed with an effective diffusivity, taking into account the various couplings arising from the presence of the defect gradients. The point-defect concentrations are calculated by the resolution of the corresponding continuity equations. This model allows fast and accurate simulations for the usual dopants (P, As, and B), and it is thus well adapted for use as a process-simulation tool.
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页码:3071 / 3080
页数:10
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