A COMPARATIVE-STUDY OF HEAVY BORON DOPING IN SILICON AND SI1-XGEX LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

SARDELA, MR

NI, WX

RADPISHEH, H

HANSSON, GV

机构：

[1] Department of Physics, Linköping Institute of Technology

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90035-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Different aspects of boron doping have been studied for silicon and Si1-xGex layers grown by molecular beam epitaxy. Boron segregation at high doping levels was measured in situ in both cases and it was found to be relatively suppressed in the alloy samples. Some possible mechanisms for this effect are discussed. Germanium segregation was also measured during the growth of the first monolayers in Si1-xGex structures. The limits for boron incorporation and activation as dopant in such structures are discussed on the basis of electrical measurements.

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页码：42 / 45

页数：4

相关论文

共 13 条

[1] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[2] OBSERVATION OF A (2X8) SURFACE RECONSTRUCTION ON SI1-XGEX ALLOYS GROWN ON (100) SI BY MOLECULAR-BEAM EPITAXY [J].

CROKE, ET ;

HAUENSTEIN, RJ ;

FU, TC ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2301-2306

[3] MODELING OF DOPANT INCORPORATION, SEGREGATION, AND ION SURFACE INTERACTION EFFECTS DURING SEMICONDUCTOR FILM GROWTH BY MOLECULAR-BEAM EPITAXY AND PLASMA-BASED TECHNIQUES [J].

GREENE, JE ;

BARNETT, SA ;

ROCKETT, A ;

BAJOR, G .

APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :520-544

[4]

KASPER EC, 1988, SILICON MOL BEAM EPI, pCH2

[5] EQUILIBRIUM ALLOY PROPERTIES BY DIRECT SIMULATION - OSCILLATORY SEGREGATION AT THE SI-GE(100) 2X1 SURFACE [J].

KELIRES, PC ;

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1989, 63 (11) :1164-1167

[6] THEORETICAL-ANALYSIS OF HALL FACTOR AND HALL-MOBILITY IN P-TYPE SILICON [J].

LIN, JF ;

LI, SS ;

LINARES, LC ;

TENG, KW .

SOLID-STATE ELECTRONICS, 1981, 24 (09) :827-833

[7] KINETICS OF DOPANT INCORPORATION USING A LOW-ENERGY ANTIMONY ION-BEAM DURING GROWTH OF SI(100) FILMS BY MOLECULAR-BEAM EPITAXY [J].

NI, WX ;

KNALL, J ;

HASAN, MA ;

HANSSON, GV ;

SUNDGREN, JE ;

BARNETT, SA ;

MARKERT, LC ;

GREENE, JE .

PHYSICAL REVIEW B, 1989, 40 (15) :10449-10459

[8]

PARRY CP, 1991, MATER RES SOC SYMP P, V220, P79, DOI 10.1557/PROC-220-79

[9]

PARRY CP, 1992, MATER RES SOC S P, V220, P103

[10]

SARDELA MR, 1991, MATER RES SOC SYMP P, V220, P109, DOI 10.1557/PROC-220-109