OPTICAL-ABSORPTION BY SURFACE-STATES AND ATOMIC REORGANIZATION EFFECTS AT THE SEMICONDUCTOR/ELECTROLYTE INTERFACE

被引:17
作者
CHAZALVIEL, JN
RAO, AV
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D O I
10.1149/1.2100631
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1138 / 1143
页数:6
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共 22 条
[1]   THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].
BARD, AJ ;
BOCARSLY, AB ;
FAN, FRF ;
WALTON, EG ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677
[2]   CHEMICALLY-INDUCED INTERFACE STATES IN PHOTO-ELECTROCHEMICAL CELLS [J].
BUTLER, MA ;
GINLEY, DS .
APPLIED PHYSICS LETTERS, 1983, 42 (07) :582-584
[4]   SURFACE-STATES INDUCED BY METAL ATOMS AT THE SI ELECTROLYTE INTERFACE [J].
CHAZALVIEL, JN ;
STEFENEL, M ;
TRUONG, TB .
SURFACE SCIENCE, 1983, 134 (03) :865-885
[5]   A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CHAZALVIEL, JN ;
TRUONG, TB .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1980, 114 (02) :299-303
[6]  
DEXTER DL, 1958, SOLID STATE PHYS, V6, P353
[7]  
Gerischer H., 1979, Solar energy conversion. Solid-state physics aspects, P115
[8]   ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY METHOD FOR CHARACTERIZATION OF DEEP LEVELS AND INTERFACE STATES IN SEMICONDUCTOR-MATERIALS [J].
HAAK, R ;
TENCH, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :275-283
[9]   OPTICAL SPECTRUM OF SEMICONDUCTOR SURFACE STATES FROM FRUSTRATED TOTAL INTERNAL REFLECTIONS [J].
HARRICK, NJ .
PHYSICAL REVIEW, 1962, 125 (04) :1165-&
[10]  
Harrick NJ, 1974, INTERNAL REFLECTION, P215