ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY METHOD FOR CHARACTERIZATION OF DEEP LEVELS AND INTERFACE STATES IN SEMICONDUCTOR-MATERIALS

被引：45

作者：

HAAK, R

TENCH, D

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115562

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：275 / 283

页数：9

共 14 条

[1] NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

ASHBY, A ;

ROBERTS, GG ;

ASHEN, DJ ;

MULLIN, JB .

SOLID STATE COMMUNICATIONS, 1976, 20 (01) :61-63

[2]

BOCKRIS JO, 1970, MODERN ELECTROCHEMIS, V2, P754

[3]

BOIS D, 1974, J PHYS-PARIS, V35, P241

[4]

BRILLSON LJ, 1977, SURF SCI, V69, P62, DOI 10.1016/0039-6028(77)90162-5

[5]

GIBSON RA, 1978, SOLID STATE ELECTRON, V2, P53

[6] ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY - A NEW METHOD FOR CHARACTERIZATION OF DEEP LEVELS IN SEMICONDUCTORS [J].

HAAK, R ;

OGDEN, C ;

TENCH, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :891-893

[7] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].

HENRY, CH ;

KUKIMOTO, H ;

MILLER, GL ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507

[8] DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1533-1537

[9] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

ELECTRONICS LETTERS, 1977, 13 (07) :191-193

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

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