DETERMINATION OF GENERATION LIFETIME IN INTRINSIC POLYCRYSTALLINE SILICON

被引：4

作者：

HURLEY, PK ^{[1
]}

TAYLOR, S ^{[1
]}

ECCLESTON, W ^{[1
]}

MEAKIN, D ^{[1
]}

机构：

[1] RYTRAK SEMICOND LTD, LIVERPOOL L7 9PF, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1525 / 1527

页数：3

共 14 条

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[2] SUBTHRESHOLD MODEL OF A POLYCRYSTALLINE SILICON THIN-FILM FIELD-EFFECT TRANSISTOR
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 290 - 292
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1025 - 1027
[4] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1878 - 1884
[5] EXPERIMENTAL STUDY OF SEMICONDUCTOR SURFACE CONDUCTIVITY
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[J]. SURFACE SCIENCE, 1966, 5 (01) : 49 - +
[6] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +
[7] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
MALHI, SDS
SHICHIJO, H
BANERJEE, SK
SUNDARESAN, R
ELAHY, M
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281
[8] P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS
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KAMINS, TI
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1103 - &
[9] STRUCTURAL STUDIES OF LOW-TEMPERATURE LOW-PRESSURE CHEMICAL DEPOSITED POLYCRYSTALLINE SILICON
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STOEMENOS, J
MIGLIORATO, P
ECONOMOU, NA
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5031 - 5037
[10] MATERIAL PROPERTIES AND CHARACTERISTICS OF POLYSILICON TRANSISTORS FOR LARGE AREA ELECTRONICS
MIGLIORATO, P
MEAKIN, DB
[J]. APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 353 - 371

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