OXYGEN-VIBRATIONAL BANDS IN IRRADIATED SILICON

被引：30

作者：

LEE, YH

CORELLI, JC

CORBETT, JW

机构：

[1] SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222 USA

[2] SUNY ALBANY, INST STUDY DEFECTS SOLIDS, ALBANY, NY 12222 USA

来源：

PHYSICS LETTERS A | 1977年 / 60卷 / 01期

关键词：

D O I：

10.1016/0375-9601(77)90319-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：55 / 57

页数：3

共 18 条

[1]

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SMITH, RS .

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[3] INFRA-RED STUDY OF DEFECTS PRODUCED IN N-TYPE SILICON BY ELECTRON IRRADIATION AT LOW TEMPERATURES [J].

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NEWMAN, RC .

SOLID STATE COMMUNICATIONS, 1971, 9 (04) :271-&

[4] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].

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HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

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[5]

BRELOT A, 1973, RAD DAMAGE DEFECTS S, P191

[6]

CHENG LJ, 1969, J APPL PHYS, V40, P1679, DOI 10.1063/1.1657265

[7] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

PHYSICAL REVIEW, 1964, 135 (5A) :1381-+

[8] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[9]

CORELLI JC, 1968, LATTICE DEFECTS SEMI, P265

[10] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J].

JUNG, W ;

NEWELL, GS .

PHYSICAL REVIEW, 1963, 132 (02) :648-&

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