LAYER-BY-LAYER EVAPORATION OF GAAS (001)

被引:21
作者
VANHOVE, JM
PUKITE, PR
WHALEY, GJ
WOWCHAK, AM
COHEN, PI
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词
D O I
10.1116/1.583064
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1116 / 1117
页数:2
相关论文
共 6 条
[1]  
ARTHUR JR, 1967, J PHYS CHEM SOLIDS, V28, P225
[2]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[3]   THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM [J].
HECKINGBOTTOM, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575
[4]   NONSTOICHIOMETRY AND CARRIER CONCENTRATION CONTROL IN MBE OF COMPOUND SEMICONDUCTORS [J].
SMITH, DL .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :33-47
[5]   DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].
VANHOVE, JM ;
LENT, CS ;
PUKITE, PR ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746
[6]   THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS [J].
VANHOVE, JM ;
PUKITE, PR ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :563-567