LAYER-BY-LAYER EVAPORATION OF GAAS (001)

被引：21

作者：

VANHOVE, JM

PUKITE, PR

WHALEY, GJ

WOWCHAK, AM

COHEN, PI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1116 / 1117

页数：2

共 6 条

[1]

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575

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[5] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].

VANHOVE, JM ;

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PUKITE, PR ;

COHEN, PI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746

[6] THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS [J].

VANHOVE, JM ;

PUKITE, PR ;

COHEN, PI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :563-567

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