INITIAL GROWTH-MECHANISM OF ALAS ON SI(111) BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

KAWAI, T

YONEZU, H

YAMAUCHI, Y

TAKANO, Y

PAK, K

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441, Tempaku-cho

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.105819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial growth mechanism of AlAs-on-Si(111) substrate was investigated. The suppression of three-dimensional growth was successfully realized at the initial growth stage, which is difficult in the growth of GaAs on Si. The initial growth process was clarified, in which the lattice relaxation proceeded gradually. It took about 30 ML to relax the lattice completely at the growth temperature of 400-degrees-C. GaAs was grown in the two-dimensional mode on the completely relaxed AlAs on the Si(111) substrate.

引用

页码：2983 / 2985

页数：3

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