共 19 条
- [1] BIATOMIC STEPS ON (001) SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3054 - 3057
- [2] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1633 - 1647
- [3] TUNNELING IMAGES OF ATOMIC STEPS ON THE SI(111)7X7 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2028 - 2031
- [4] GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (02) : 116 - 119
- [5] ARSENIC-TERMINATED SILICON AND GERMANIUM SURFACES STUDIED BY SCANNING TUNNELLING MICROSCOPY [J]. JOURNAL OF MICROSCOPY-OXFORD, 1988, 152 : 157 - 165
- [6] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536
- [8] ATOMIC-STRUCTURE OF THE ARSENIC-SATURATED SI(111) SURFACE [J]. PHYSICAL REVIEW B, 1988, 37 (18): : 10756 - 10763
- [9] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
- [10] RECONSTRUCTION OF STEPS ON THE SI(111)2X1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (19) : 2173 - 2176