NEW PHOTORESISTS FOR DEEP ULTRAVIOLET (LESS-THAN 300 NM) EXPOSURE

被引：9

作者：

CHANDROSS, EA

REICHMANIS, E

WILKINS, CW

HARTLESS, RL

机构：

来源：

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE | 1983年 / 61卷 / 05期

关键词：

D O I：

10.1139/v83-149

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：817 / 823

页数：7

共 12 条

[1]

CALVERT JG, 1966, PHOTOCHEMISTRY, P298

[2]

DEFOREST WS, 1975, PHOTORESIST MATERIAL

[3] PHOTOPOLYMERIZATION INITIATED BY O-ACYLOXIMES [J].

DELZENNE, GA ;

LARIDON, U ;

PEETERS, H .

EUROPEAN POLYMER JOURNAL, 1970, 6 (07) :933-&

[4] DEEP-UV PHOTORESISTS - POLY(METHYL METHACRYLATE-CO-INDENONE) [J].

HARTLESS, RL ;

CHANDROSS, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1333-1337

[5]

Kosar J., 1965, LIGHT SENSITIVE SYST

[6] DEEP-UV CONFORMABLE-CONTACT PHOTOLITHOGRAPHY FOR BUBBLE CIRCUITS [J].

LIN, BJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1976, 20 (03) :213-221

[7] A NOVEL-APPROACH TO ORTHO-NITROBENZYL PHOTOCHEMISTRY FOR RESISTS [J].

REICHMANIS, E ;

WILKINS, CW ;

CHANDROSS, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1338-1342

[8] THE EFFECT OF SENSITIZERS ON THE PHOTODEGRADATION OF POLY (METHYL METHACRYLATE-CO-3-OXIMINO-2-BUTANONE METHACRYLATE) [J].

REICHMANIS, E ;

WILKINS, CW ;

CHANDROSS, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2514-2517

[9]

REICHMANIS E, 1982, 161ST M EL SOC MONTR

[10]

REICHMANIS E, 1980, AM CHEM SOC DIV ORG, V43, P243

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