NEW TECHNIQUE FOR GROWING EPITAXIAL-FILMS OF PB1-XSNXTE

被引：11

作者：

LOWNEY, JR ^{[1
]}

CAMMACK, DA ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

MATERIALS RESEARCH BULLETIN | 1974年 / 9卷 / 12期

关键词：

D O I：

10.1016/0025-5408(74)90155-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1639 / 1646

页数：8

共 9 条

[1] APPLICABILITY OF VEGARDS LAW TO PBXSN1-XTE ALLOY SYSTEM [J].

BIS, RF ;

DIXON, JR .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1918-&

[2] THICK EPITAXIAL FILMS OF PB1-XSNXTE [J].

BIS, RF ;

DIXON, JR ;

LOWNEY, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :226-&

[3] ANNEALING STUDIES OF PBTE AND PB1-XSNXTE [J].

HEWES, CR ;

ADLER, MS ;

SENTURIA, SD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1327-1332

[4] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[5]

Logothetis E. M., 1970, Solid State Communications, V8, P1937, DOI 10.1016/0038-1098(70)90663-0

[6]

Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]

[7] PHOTOCONDUCTIVE PROPERTIES OF PBTE AND PB0.8SN0.2TE EPITAXIAL FILMS [J].

NUCCIOTTI, A ;

MASCHERETTI, P ;

SAMOGGIA, G ;

DESTEFAN.P .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :193-+

[8]

Pratt G. W. Jr., 1973, Journal of Nonmetals, V1, P103

[9]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

← 1 →