FORMATION OF MICROCRYSTALLINE STRUCTURE IN A-SI-H FILMS PREPARED BY RF SPUTTERING

被引:7
作者
NODA, M
SHIMIZU, H
KOHNO, H
ISHIDA, H
机构
关键词
D O I
10.1016/0022-3093(83)90297-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:823 / 826
页数:4
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[1]   HYDROGENATED CRYSTALLINE SILICON FABRICATED AT LOW-SUBSTRATE TEMPERATURES BY REACTIVE SPUTTERING IN HE-H2 ATMOSPHERE [J].
IMURA, T ;
MOGI, K ;
HIRAKI, A ;
NAKASHIMA, S ;
MITSUISHI, A .
SOLID STATE COMMUNICATIONS, 1981, 40 (02) :161-164
[2]   MICROSTRUCTURES AND HYDROGEN-BONDING ENVIRONMENTS OF A-SI-H FILMS PREPARED BY RF SPUTTERING IN PURE HYDROGEN [J].
ISHIDA, H ;
NODA, M ;
SHIMIZU, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L73-L75
[3]   STRUCTURAL INTERPRETATION OF THE VIBRATIONAL-SPECTRA OF A-SI-H ALLOYS [J].
LUCOVSKY, G ;
NEMANICH, RJ ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1979, 19 (04) :2064-2073
[4]   MICROSTRUCTURES AND HYDROGEN-BONDING ENVIRONMENTS OF SPUTTER-DEPOSITED A-SI-H FILMS [J].
NODA, M ;
ISHIDA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L195-L197