OPTICAL STABILITY OF SILICON-NITRIDE MIS INVERSION LAYER SOLAR-CELLS

被引：16

作者：

JAGER, K

HEZEL, R

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1824 / 1829

页数：6

共 16 条

[1]

BLUMENSTOCK K, 1985, INSULATING FILMS SEM

[2]

BURTE EP, 1984, THESIS U ERLANGEN NU

[3] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[4] TWO-DIMENSIONAL MODELING OF THE MIS GRATING SOLAR-CELL [J].

DEVISSCHERE, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :840-849

[5]

GREEN MA, 1982, SOLAR CELLS

[6] PLASMA SI NITRIDE - A PROMISING DIELECTRIC TO ACHIEVE HIGH-QUALITY SILICON MIS-IL SOLAR-CELLS [J].

HEZEL, R ;

SCHORNER, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :3076-3079

[7] INTERFACE STATES AND FIXED CHARGES IN MNOS STRUCTURES WITH APCVD AND PLASMA SILICON-NITRIDE [J].

HEZEL, R ;

BLUMENSTOCK, K ;

SCHORNER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) :1679-1683

[8] PROPERTIES OF INVERSION-LAYERS FOR MIS/IL SOLAR-CELLS STUDIED ON LOW-TEMPERATURE-PROCESSED MNOS TRANSISTORS [J].

HEZEL, R ;

JAGER, K .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :993-997

[9] HIGH-TEMPERATURE ANNEALING OF MNOS DEVICES AND ITS EFFECT ON SI-NITRIDE STRESS, INTERFACE CHARGE-DENSITY AND MEMORY PROPERTIES [J].

HEZEL, R .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (04) :459-484

[10]

HEZEL R, 1982, 16TH P IEEE PHOT SPE, P1237

← 1 2 →