SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES

被引：93

作者：

CROWELL, CR

SHORE, HB

LABATE, EE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 12期

关键词：

D O I：

10.1063/1.1713959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3843 / &

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