ELECTRICAL-PROPERTIES OF N-TYPE POLYCRYSTALLINE INDIUM-PHOSPHIDE FILMS

被引：14

作者：

SAITOH, T ^{[1
]}

MATSUBARA, S ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 07期

关键词：

D O I：

10.1149/1.2133483

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1065 / 1069

页数：5

共 12 条

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[8] MICROSTRUCTURE OF POLYCRYSTALLINE INDIUM-PHOSPHIDE PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

SAITOH, T ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :893-894

[9] GROWTH AND STRUCTURE OF POLYCRYSTALLINE INDIUM-PHOSPHIDE LAYERS ON MOLYBDENUM SHEETS [J].

SAITOH, T ;

MATSUBARA, S ;

MINAGAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :403-406

[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

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